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s o t 8 8 3 PMZ950UPE 20 v, p-channel trench mosfet 8 may 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description p-channel enhancement mode field-effect transistor (fet) in a leadless ultra small dfn1006-3 (sot883) surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? trench mosfet technology ? leadless ultra small and ultra thin smd plastic package: 1.0 0.6 0.48 mm ? electrostatic discharge (esd) protection > 1 kv hbm ? drain-source on-state resistance r dson = 1.02 ? 3. applications ? relay driver ? high-speed line driver ? high-side load switch ? switching circuits 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - -20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = -4.5 v; t amb = 25 c [1] - - -500 ma static characteristics r dson drain-source on-state resistance v gs = -4.5 v; i d = -500 ma; t j = 25 c - 1.02 1.4 [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 1 cm 2 .
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 2 / 15 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 s source 3 d drain 3 1 2 t r a n s p a r e n t t o p v i e w dfn1006-3 (sot883) 017aaa259 g d s 6. ordering information table 3. ordering information package type number name description version PMZ950UPE dfn1006-3 dfn1006-3: leadless ultra small plastic package; 3 solder lands sot883 7. marking table 4. marking codes type number marking code PMZ950UPE zt
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 3 / 15 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - -20 v v gs gate-source voltage t j = 25 c -8 8 v v gs = -4.5 v; t amb = 25 c [1] - -500 ma i d drain current v gs = -4.5 v; t amb = 100 c [1] - -300 ma i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -2 a [2] - 360 mw t amb = 25 c [1] - 715 mw p tot total power dissipation t sp = 25 c - 2700 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb = 25 c [1] - -350 ma [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 3 4 0 8 0 1 2 0 p d e r ( % ) 0 fig. 1. normalized total power dissipation as a function of junction temperature t j ( c ) - 7 5 1 7 5 1 2 5 2 5 7 5 - 2 5 0 1 7 a a a 1 2 4 4 0 8 0 1 2 0 i d e r ( % ) 0 fig. 2. normalized continuous drain current as a function of junction temperature
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 4 / 15 aaa-012960 v d s (v) -10 - 1 -10 2 -10 - 1 - 1 -10 - 1 -10 i d (a) -10 - 2 dc; t s p = 25 c dc; t amb = 25 c; drain mounting pad 1 cm 2 t p = 1 ms t p = 10 ms t p = 100 ms limit r dson = v d s / i d t p = 100 s i dm = single pulse fig. 3. safe operating area; junction to ambient; continuous and peak drain currents as a function of drain- source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 305 360 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 150 175 k/w r th(j-sp) thermal resistance from junction to solder point - - 40 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 .
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 5 / 15 0 1 7 a a a 1 0 9 t p ( s ) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 3 z t h ( j - a ) ( k / w ) 1 0 d u t y c y c l e = 1 0 . 7 5 0 . 5 0 . 3 3 0 . 2 5 0 . 2 0 . 0 5 0 . 0 2 0 . 0 1 0 0 . 1 fr4 pcb, standard footprint fig. 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 0 1 7 a a a 1 1 0 t p ( s ) 1 0 - 3 1 0 2 1 0 3 1 0 1 1 0 - 2 1 0 - 1 1 0 2 1 0 3 z t h ( j - a ) ( k / w ) 1 0 d u t y c y c l e = 1 0 . 7 5 0 . 5 0 . 3 3 0 . 2 5 0 . 2 0 0 . 1 0 . 0 2 0 . 0 1 0 . 0 5 fr4 pcb, mounting pad for drain 1 cm 2 fig. 5. transient thermal impedance from junction to ambient as a function of pulse duration; typical values
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 6 / 15 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = -250 a; v gs = 0 v; t j = 25 c -20 - - v v gsth gate-source threshold voltage i d = -250 a; v ds = v gs ; t j = 25 c -0.45 -0.7 -0.95 v v ds = -20 v; v gs = 0 v; t j = 25 c - - -1 a i dss drain leakage current v ds = -20 v; v gs = 0 v; t j = 150 c - - -10 a v gs = 8 v; v ds = 0 v; t j = 25 c - - 10 a v gs = -8 v; v ds = 0 v; t j = 25 c - - -10 a v gs = -4.5 v; v ds = 0 v; t j = 25 c - - -1 a i gss gate leakage current v gs = 4.5 v; v ds = 0 v; t j = 25 c - - 1 a v gs = -4.5 v; i d = -500 ma; t j = 25 c - 1.02 1.4 v gs = -4.5 v; i d = -500 ma; t j = 150 c - 1.54 2.1 v gs = -2.5 v; i d = -200 ma; t j = 25 c - 1.27 2.2 v gs = -1.8 v; i d = -40 ma; t j = 25 c - 1.7 3.3 v gs = -1.5 v; i d = -10 ma; t j = 25 c - 2.3 5 r dson drain-source on-state resistance v gs = -1.2 v; i d = -1 ma; t j = 25 c - 3.5 - g fs forward transconductance v ds = -10 v; i d = -500 ma; t j = 25 c - 480 - ms dynamic characteristics q g(tot) total gate charge - 1.19 2.1 nc q gs gate-source charge - 0.17 - nc q gd gate-drain charge v ds = -10 v; i d = -450 ma; v gs = -4.5 v; t j = 25 c - 0.1 - nc c iss input capacitance - 43 - pf c oss output capacitance - 14 - pf c rss reverse transfer capacitance v ds = -10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 8 - pf t d(on) turn-on delay time - 2.3 - ns t r rise time - 5 - ns t d(off) turn-off delay time - 13.5 - ns t f fall time v ds = -10 v; i d = -0.45 a; r l = 22 ; v gs = -4.5 v; r g(ext) = 6 ; t j = 25 c - 6 - ns source-drain diode v sd source-drain voltage i s = -115 ma; v gs = 0 v; t j = 25 c - -0.7 -1.2 v
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 7 / 15 v d s (v) 0 - 4 - 3 - 1 - 2 aaa-006904 -1.0 -0.5 -1.5 -2.0 i d (a) 0.0 v g s = -4.5 v - 3 . 5 v - 3 v - 2 . 5 v - 1 . 8 v - 1 . 2 v t j = 25 c fig. 6. tr2: output characteristics; drain current as a function of drain-source voltage; typical values aaa-006905 v g s (v) 0.0 -1.5 -1.0 -0.5 -10 - 5 -10 - 4 -10 - 3 -10 - 2 i d (a) -10 - 6 m i n t y p m a x t j = 25 c; v ds = -5 v fig. 7. tr2: sub-threshold drain current as a function of gate-source voltage i d (v) 0.0 -2.0 -1.5 -0.5 -1.0 aaa-006906 1.0 0.5 1.5 2.0 r dson () 0.0 v g s = -4.5 v - 3 . 5 v - 3 v - 2 . 5 v - 1 . 8 v - 2 . 2 v t j = 25 c fig. 8. tr2: drain-source on-state resistance as a function of drain current; typical values v g s (v) 0 - 5 - 4 - 2 - 3 - 1 aaa-006907 2 3 1 4 5 r dson () 0 t j = 1 5 0 c t j = 2 5 c i d = -0.5 a fig. 9. tr2: drain-source on-state resistance as a function of gate-source voltage; typical values
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 8 / 15 v g s (v) 0 - 4 - 3 - 1 - 2 aaa-006908 -0.50 -0.25 -0.75 -1.00 i d (a) 0.00 t j = 1 5 0 c t j = 2 5 c v ds > i d r dson fig. 10. tr2: transfer characteristics; drain current as a function of gate-source voltage; typical values t j (c) -60 180 120 0 6 0 aaa-006909 1.00 0.75 1.25 1.50 a 0.50 fig. 11. tr2: normalized drain-source on-state resistance as a function of junction temperature; typical values t j (c) -60 180 120 0 6 0 aaa-006910 -0.5 -1.0 -1.5 v gs(th) (v) 0.0 m i n t y p m a x i d = -0.25 ma; v ds = v gs fig. 12. tr2: gate-source threshold voltage as a function of junction temperature aaa-00691 1 v d s (v) -10 - 1 -10 2 -10 - 1 1 0 1 0 2 c (pf) 1 c i s s c o s s c rss f = 1 mhz; v gs = 0 v fig. 13. tr2: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 9 / 15 aaa-006912 q g (nc) 0 0.6 0.4 0.2 - 2 - 3 - 1 - 4 - 5 v g s (v) 0 i d = -0.45 a; v ds = -10 v; t amb = 25 c fig. 14. tr2: gate-source voltage as a function of gate charge; typical values 0 1 7 a a a 1 3 7 v g s v g s ( t h ) q g s 1 q g s 2 q g d v d s q g ( t o t ) i d q g s v g s ( p l ) fig. 15. mosfet transistor: gate charge waveform definitions v s d (v) 0.0 -2.0 -1.5 -0.5 -1.0 aaa-006913 -1.0 -0.5 -1.5 -2.0 i s (a) 0.0 t j = 1 5 0 c t j = 2 5 c v gs = 0 v fig. 16. tr2: source current as a function of source-drain voltage; typical values 11. test information t 1 t 2 p t 0 0 6 a a a 8 1 2 d u t y c y c l e = t 1 t 2 fig. 17. duty cycle definition
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 10 / 15 12. package outline u n i t a 1 m a x . a ( 1 ) b b 1 e 1 e l l 1 r e f e r e n c e s o u t l i n e v e r s i o n e u r o p e a n p r o j e c t i o n i s s u e d a t e i e c j e d e c j e i t a m m 0 . 5 0 0 . 4 6 0 . 2 0 0 . 1 2 0 . 5 5 0 . 4 7 0 . 0 3 0 . 6 2 0 . 5 5 0 . 3 5 0 . 6 5 d i m e n s i o n s ( m m a r e t h e o r i g i n a l d i m e n s i o n s ) n o t e 1 . i n c l u d i n g p l a t i n g t h i c k n e s s 0 . 3 0 0 . 2 2 0 . 3 0 0 . 2 2 s o t 8 8 3 s c - 1 0 1 0 3 - 0 2 - 0 5 0 3 - 0 4 - 0 3 d e 1 . 0 2 0 . 9 5 l e 2 3 1 b b 1 a 1 a d l 1 0 0 . 5 1 m m s c a l e l e a d l e s s u l t r a s m a l l p l a s t i c p a c k a g e ; 3 s o l d e r l a n d s ; b o d y 1 . 0 x 0 . 6 x 0 . 5 m m s o t 8 8 3 e e 1 fig. 18. package outline dfn1006-3 (sot883)
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 11 / 15 13. soldering s o l d e r l a n d s s o l d e r r e s i s t o c c u p i e d a r e a s o l d e r p a s t e s o t 8 8 3 _ f r 1 . 3 0 . 3 0 . 6 0 . 7 0 . 4 0 . 9 0 . 3 ( 2 ) 0 . 4 ( 2 ) 0 . 2 5 ( 2 ) r 0 . 0 5 ( 1 2 ) 0 . 7 d i m e n s i o n s i n m m fig. 19. reflow soldering footprint for dfn1006-3 (sot883)
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 12 / 15 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes PMZ950UPE v.1 20140508 product data sheet - -
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 13 / 15 15. legal information 15.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 14 / 15 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nxp semiconductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nxp semiconductors standard warranty and nxp semiconductors product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i- code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode are trademarks of nxp semiconductors n.v. hd radio and hd radio logo are trademarks of ibiquity digital corporation.
nxp semiconductors PMZ950UPE 20 v, p-channel trench mosfet PMZ950UPE all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights reserved product data sheet 8 may 2014 15 / 15 16. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 11 test information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ? nxp semiconductors n.v. 2014. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 8 may 2014

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